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Hitachi

Hitachi Power Semiconductor Device, Ltd.

nHPD2

nHPD2
Next High Power Density Dual - nHPD2
  • From 1700V to 6500V
  • High Power Density
  • Low Inductance
  • Scalable, Easy Paralleling
  • Standard and High Isolation Package

SiC

SiC Module
  • Advanced Trench HiGT - sLiPT
  • SiC Schottky Barrier Diode
  • Ultra low recovery loss with SiC diode

650V

650V Module
  • High speed, low loss IGBT module
  • Low thermal impedance due to direct liquid cooling
  • High reliability, high durability module

1700V

D-Version
  • Low switching loss
E-Version
  • Low VCE(sat)
  • Soft switching
F-Version
  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
  • Low spike voltage

2500V

C-Version
  • Standard 3rd generation Planer IGBT
E-Version
  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching

3300V

C-Version
  • Standard 3rd generation Planer IGBT
D-Version
  • Planer IGBT - LiPT
  • Low switching loss
E-Version
  • Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
E2-Version
  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
E3-Version
  • Fine Planer HiGT - sLiPT
  • Soft switching
  • Low spike voltage
  • For large Ls circuit, series connection
F-Version
  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance

4500V

D-Version
  • Planer IGBT - LiPT
  • Low switching loss
E2-Version
  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
E2-H-Version
  • Fine Planer HiGT - sLiPT
  • Low switching loss
F-Version
  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance

6500V

E2-Version
  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching