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Hitachi

Hitachi Power Semiconductor Device, Ltd.

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3300V A-Version

  • Standard 2nd Generation
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1
Diode
1200   M  
*1
M:Mass production, W:Working sample, D:Discontinued

3300V C-Version

  • Standard 3rd generation Planer IGBT
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 1200   M  
Chopper 800   M  
*1
M:Mass production, W:Working sample, D:Discontinued

3300V D-Version

  • Planer IGBT - LiPT
  • Low switching loss
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 800   M  
800
  • Low recovery loss
  • For high frequency application
M  
1200   M  
1200
  • High isolation package
M  
2in1 IGBT 400
  • Ultra low switching loss and recovery loss
  • For high frequency application
M
Chopper 400   M  
800   M  
2in1
Diode
800   M  
1200   M  
*1
M:Mass production, W:Working sample, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2012.

3300V E-Version

  • Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 800   M  
1200   M  
Chopper 800   M  
*1
M:Mass production, W:Working sample, D:Discontinued

3300V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 1000   M
1500   M
2in1 IGBT 500   M
Chopper 1000   M
*1
M:Mass production, W:Working sample, D:Discontinued

3300V E3-Version

  • Fine Planer HiGT - sLiPT
  • Soft switching
  • Low spike voltage
  • For large Ls circuit, series connection
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 1500   M  
2in1 IGBT 250
  • High isolation package
M  
*1
M:Mass production, W:Working sample, D:Discontinued

3300V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance
Package IC(A) Type Name
(Update)
Feature Status*1 Application Note
1in1 IGBT 1200   M
1800   M
1800 High isolation package M  
2in1 IGBT 450 nHPD2 M  
2in1 Diode 1200 High isolation package M  
1in1 SiC 1200   W  
1800   W  
2in1 SiC 450 nHPD2 W  
*1
M:Mass production, W:Working sample, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference2013.
*3
The first publication of the papers was at PCIM Europe Conference2014.

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