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Hitachi Power Semiconductor Device, Ltd.

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  • Advanced Trench HiGT - sLiPT
  • SiC Schottky Barrier Diode
  • Ultra low recovery loss with SiC diode
Package VCES
IC(A) Type Name
Status*1 Application Note
1in1 SiC 3300 1200 W  
1800 W  
2in1 SiC 1700 900 W  
3300 450 W  
M:Mass production, W:Working sample, D:Discontinued
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