Hitachi Power Semiconductor Device, Ltd.

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Hitachi

Hitachi Power Semiconductor Device, Ltd.

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1200V

  • High speed, low loss IGBT module.
  • Low driving power: Low input capacitance advanced IGBT.
  • Low thermal impedance due to direct liquid cooling.
  • High reliability, high durability module.
  • Temperature sensor on IGBT.
Package Type Name
(Update)
IC(A) Feature Status*1 Application Note Outline Step file
6in1 IGBT 400   U    
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
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