Hitachi Power Semiconductor Device, Ltd.

Skip to main content

Hitachi
Contact UsContact Us

Before using this web service please read Terms of Use.

1700V G2-Version

  • Low power dissipation by side-gate HiGT.
  • Low noise & easy drive through low Cies and Cres
Package Type Name
(Update)
IC(A) Feature Status*1 Application Note Outline Step file
2in1
Hybrid-SiC
1000
  • LV-nHPD2 Package
    (Standard isolation)
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

1700V G-Version

  • High Power Density
  • Low Inductance
  • Scalable, Easy Paralleling
  • Standard and High Isolation Package
Package Type Name
(Update)
IC(A) Feature Status*1 Application Note Outline Step file
2in1
IGBT
1000
  • LV-nHPD2 Package
    (Standard isolation)
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

1700V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
  • Low spike voltage
Package Type Name
(Update)
IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
1600
  • IHM Package
    (Standard isolation)
M
2400
  • IHM Package
    (Standard isolation)
M
3600
  • IHM Package
    (Standard isolation)
M
2in1
IGBT
600
  • IHM Package
    (Standard isolation)
U
1200
  • IHM Package
    (Standard isolation)
M
Chopper 1200
  • IHM Package
    (Standard isolation)
M
1200
  • For Braking circuit
    IHM Package
    (Standard isolation)
M
1600
  • IHM Package
    (Standard isolation)
M
*1
M:Mass production, W:Working sample, U:Under development, N:Not for new design, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2011.

1700V D-Version

Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
2in1
Diode
900
  • IHM Package
    (Standard isolation)
M  
1200
  • IHM Package
    (Standard isolation)
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
In order to read a PDF file, you need to have Adobe Acrobat Reader installed in your computer.