Hitachi Power Semiconductor Device, Ltd.

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Hitachi

Hitachi Power Semiconductor Device, Ltd.

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6500V G2-Version

  • Side-gate High conductivity IGBT
  • Low input capacitance
  • High dv/dt controllability by low mirror capacitance
Package Type Name
(Update)
IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
1000
  • High isolation package
U    
*1
M:Mass production, W:Working sample, D:Discontinued

6500V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
Package Type Name
(Update)
IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
500
  • High isolation package
M  
750
  • High isolation package
M  
2in1
Diode
250
  • High isolation package
M  
500
  • High isolation package
M  
750
  • High isolation package
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
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