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Hitachi Power Semiconductor Device, Ltd.

Technical Literature

Technical Paper

IGBT

Technical Paper Title First autor Submission Posting Comment
IGBT Dual Side-Gate HiGT Breaking Through the Limitation of IGBT Loss Reduction T.Miyoshi 201705 PCIM  
A Novel Hybrid Power Module with Dual Side-Gate HiGT and SiC-SBD Y.Takeuchi 201705 ISPSD  
Side Gate HiGT with Low Loss and Low Noise   201701 Hitachi Review 2017 Vol.99 No.1 Written in Japanese
Side Gate HiGT with Low dv/dt Noise and Low Loss M.Shiraishi 201606 ISPSD  
High Voltage Module with Low Internal Inductance for Next Chip Generation - Next High Power Density Dual (nHPD2) D.Kawase 201505 Mesago PCIM 2015  
New 4.5kV IGBT Module with Low Power Loss and High Current Ratings T.Matsumoto 201505 Mesago PCIM 2015  
New 1800A/3.3kV IGBT Module Using Advanced Trench HiGT Technoligy and Module Design Optimization T.Kushima 201405 Mesago PCIM 2014  
Novel 3.3-kV Advanced Trench HiGT with Low Loss and Low dv/dt Noise Y.Toyota 201305 ISPSD  
1.7kV Trench IGBT with Deep and Separate Floating p-Layer Designed for Low Loss, Low EMI Noise, and High Reliability S.Watanabe 201105 ISPSD  

SiC

Technical Paper Title First autor Submission Posting Comment
SiC High reliability termination technology for SiC Power Devices H.Onose 201603 IEEJ Written in Japanese
Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depeletion-layer Capacitance (MDC) H.Matsushima 201509 SSDM  

SiC-MOS

Technical Paper Title First autor Submission Posting Comment
SiC-MOS Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults R.Fujita 201709 ICSCRM  
Channel Properties of SiC Trench-Etched Double-Diffused MOS (TED MOS) N.Tega 201602 IEEE Transactions on Electron Devices  
Novel Trench-etched Double-diffused SiC MOS (Ted MOS) to overcome tradeoff between RonA and Qgd N.Tega 201505 ISPSD  
Full-SiC 3.3kV/450A low inductance module; nHPD2 with smooth switching T.Ishigaki 201505 Mesago PCIM 2017  

SiC-SBD

Technical Paper Title First autor Submission Posting Comment
SiC-SBD 3.3KV hybrid module using SiC-SBD K.Ogawa 201203 IEEJ Written in Japanese
Traction inverter that applies hybrid module using 3-kV SiC-SBDs K.Ishikawa 201006 IPEC 2010 Paper: The 2010 International Power Electronics Conference - ECCE ASIA - (2010)

Sintered Copper

Technical Paper Title First autor Submission Posting Comment
Sintered Copper High Power Density Side-Gate HiGT Modules with Sintered Cu Having Superior High-Temperature Reliability to Sintered Ag T.Furukawa 201705 ISPSD  
Highly Reliable and Lead-Free High Power IGBT Modules Using Novel Copper Sintering Die attachment A.Konno 201605 PCIM  
New Bonding Technique Using Copper Oxide Materials T.Morita 201403 Materials Transactions  

Reliability

Technical Paper Title First autor Submission Posting Comment
Reliability Improvement of Power Cycling Reliability of Sn-Cu Based Solder T.Miyazaki 201507 IMAPS
International Microelectronics Assembly and Packaging Society
 
Study of Heat Transfer Measurement Method of Water-cooled Heatsink K.Horiuchi 201506 HTSJ Lecture
High precision thermal resistance measurement technology for Direct Water Cooling Module K.Horiuchi 201505 JMA Lecture, Japanese
Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing K.Sasaki 201309 Microelectronics Reliability Contribution
Volume 53, Issue 9-11, 2013, pp1766-1770
Effect of Heat Generation on Fatigue-Crack Propagation of Solder in Power Devices S.Hiramitsu 201107 ASME InterPACK Lecture
IPACK2011-52247, pp. 345-350
Small size, low thermal resistance and high reliability packaging technologies of IGBT module for wind power applications K.Sasaki 201005 PCIM Lecture

Direct Water Cooling

Technical Paper Title First autor Submission Posting Comment
Direct Water Cooling Advanced Direct-water-cool Power Module having Pinfin Heatsink with Low Pressure Drop and High Heat Transfer K.Horiuchi 201305 ISPSD2013  

High Voltage IC

Technical Paper Title First autor Submission Posting Comment
High Voltage IC Low On-Resistance High Voltage Thin Layer SOI LDMOS Transistors with Stepped Field Plates K.Hara 201705 ISPSD2017  
A New Conpact, Low On Resistace and High Off Isolation High Voltage Analog Switch IC Without Using High Voltage Power Supplies for Ultrasound Imaging System F.Yamashita 201606 ISPSD2016  
600V Single Chip Inverter IC with New SOI Technology K.Hara 201406 ISPSD2014