We displayed mainly IGBT modules for EV market and nHPD2 as a next generation package. Thank you for visiting our booth.
Hitachi, Ltd. R&D Group received a Young Engineer Award in the parallel held conference. The paper titled "Dual side-gate HiGT breaking through limitation of IGBT loss reduction" provided an IGBT having two gates to be controlled individually. It shows switching loss reduction by 35% compared with conventional trench gate IGBTs.