株式会社日立功率半导体

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Hitachi

株式会社日立功率半导体

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750V

Die Type Name Vce(V) IC(A) Feature Status*1 Application Note
IGBT TBD 750 400   S  
Diode TBD 750 400   S  
*1
M:Mass production, W:Working sample, U:Under development, S:Under Study, D:Discontinued

1200V

Die Type Name Vce(V) IC(A) Feature Status*1 Application Note
IGBT TBD 1200 200   S  
Diode TBD 1200 200   S  
*1
M:Mass production, W:Working sample, U:Under development, S:Under Study, D:Discontinued

1700V

Die Type Name Vce(V) IC(A) Feature Status*1 Application Note
IGBT TBD 1700 150   S  
Diode TBD 1700 225   S  
*1
M:Mass production, W:Working sample, U:Under development, S:Under Study, D:Discontinued

3300V

Die Type Name Vce(V) IC(A) Feature Status*1 Application Note
IGBT TBD 3300 TBD   S  
Diode TBD 3300 TBD   S  
*1
M:Mass production, W:Working sample, U:Under development, S:Under Study, D:Discontinued

4500V

Die Type Name Vce(V) IC(A) Feature Status*1 Application Note
IGBT TBD 4500 TBD   S  
Diode TBD 4500 TBD   S  
*1
M:Mass production, W:Working sample, U:Under development, S:Under Study, D:Discontinued

6500V

Die Type Name Vce(V) IC(A) Feature Status*1 Application Note
IGBT TBD 6500 TBD   S  
Diode TBD 6500 TBD   S  
*1
M:Mass production, W:Working sample, U:Under development, S:Under Study, D:Discontinued
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