株式会社日立功率半导体

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SiC(Full SiC)

  • Ultra low switching loss with SiC MOSFET
  • High current density package
  • Low Inductance
  • Scalable, Easy Paralleling
Package Type Name
(Update)
VCES
(V)
IC(A) Feature Status*1 Application Note Outline Step file
2in1 SiC 1700 900
  • LV-nHPD2 Package
    (Standard isolation)
U  
3300 600
  • LV-nHPD2 Package
    (Standard isolation)
U  
3300 800
  • LV-nHPD2 Package
    (Standard isolation)
U  
2in1
SiC-SBD
3300 1200
  • IHM Package
    (Standard isolation)
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

SiC(Hybrid SiC)

  • Advanced Trench HiGT - sLiPT
  • SiC Schottky Barrier Diode
  • Ultra low recovery loss with SiC diode
Package Type Name
(Update)
VCES
(V)
IC(A) Feature Status*1 Application Note Outline Step file
1in1
Hybrid-SiC
3300 1200
  • IHM Package
    (Standard isolation)
M  
3300 1800
  • IHM Package
    (Standard isolation)
M  
2in1
Hybrid-SiC
1700 1000
  • LV-nHPD2 Package
    (Standard isolation)
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
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