株式会社日立功率半导体

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Hitachi

株式会社日立功率半导体

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SiC(Full SiC)

  • Ultra low switching loss with SiC MOSFET
  • High current density package
  • Low Inductance
  • Scalable, Easy Paralleling
Package Type Name
(Update)
VCES
(V)
IC(A) Status*1 Application Note Outline Step file
2in1 SiC 3300 600 U    
3300 800 U  
1700 900 U    
Chopper
SiC
3300 800 U    
3300 800 U    
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2018.

SiC(Hybrid SiC)

  • Advanced Trench HiGT - sLiPT
  • SiC Schottky Barrier Diode
  • Ultra low recovery loss with SiC diode
Package Type Name
(Update)
VCES
(V)
IC(A) Status*1 Application Note Outline Step file
1in1 SiC 3300 1200 M  
3300 1800 M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
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