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株式会社日立功率半导体

技术文献

技术论文

IGBT

Technical Paper Title First autor Submission Posting Comment
IGBT High temperature, high power density power semiconductor module for xEV application K. Yasui 2020/08 Engineering Materials September 2020 Issue Written in Japanese
New 6.5kV 1000A IGBT Module with Side Gate HiGT H. Koguchi 2018/05 PCIM Europe2018  
An Innovative Silicon Power Device (i-Si)
through Time and Space Control of a Stored Carrier (TASC)
M. Mori 2018/05 ISPSD2018  
Dual Side-Gate HiGT Breaking Through the Limitation of IGBT Loss Reduction T.Miyoshi 2017/05 PCIM  
A Novel Hybrid Power Module with Dual Side-Gate HiGT and SiC-SBD Y.Takeuchi 2017/05 ISPSD  
Side Gate HiGT with Low Loss and Low Noise   2017/01 Hitachi Review 2017 Vol.99 No.1 Written in Japanese
Side Gate HiGT with Low dv/dt Noise and Low Loss M.Shiraishi 2016/06 ISPSD  
High Voltage Module with Low Internal Inductance for Next Chip Generation - Next High Power Density Dual (nHPD2) D.Kawase 2015/05 Mesago PCIM 2015  
New 4.5kV IGBT Module with Low Power Loss and High Current Ratings T.Matsumoto 2015/05 Mesago PCIM 2015  
New 1800A/3.3kV IGBT Module Using Advanced Trench HiGT Technoligy and Module Design Optimization T.Kushima 2014/05 Mesago PCIM 2014  
Novel 3.3-kV Advanced Trench HiGT with Low Loss and Low dv/dt Noise Y.Toyota 2013/05 ISPSD  
1.7kV Trench IGBT with Deep and Separate Floating p-Layer Designed for Low Loss, Low EMI Noise, and High Reliability S.Watanabe 2011/05 ISPSD  

SiC

Technical Paper Title First autor Submission Posting Comment
SiC A edge termination with enhanced field-limiting rings insensitive to surface charge for high voltage SiC power devices T. Hirao 2020/03 IEEE Transactions on Electron Devices  
Low loss technologies of Hitachi's Power Semiconductor Devices H. Kageyama 2019/01 Technical magazine Smart Grid January 2019 issue Written in Japanese
High reliability termination technology for SiC Power Devices H.Onose 2016/03 IEEJ Written in Japanese
Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depeletion-layer Capacitance (MDC) H.Matsushima 2015/09 SSDM  

SiC-MOS

Technical Paper Title First autor Submission Posting Comment
SiC-MOS High-power Density SiC Power Module (3.3 kV/1,000 A) Using Sintered-copper Die-attach Technology   2020/01 “Hitachi Technology 2020: Technology & Innovation Foresights 2020”
2020 vol.120 No.1
Written in Japanese
SiC Modules for Railway Inverters Able to Operate at High Temperatures   2020/01 “Hitachi Technology 2020: Technology & Innovation Foresights 2020”
2020 vol.120 No.1
Written in Japanese
Development of 3.3kV High Power Density Full-SiC Power Modules with Sintered Copper Die Attach Technology K. Yasui 2019/10 ISAPP2019  
Diode-less SiC Power Module With Countermeasures Against Bipolar Degradation Achieving Ultrahigh Power Density T. Ishigaki 2019/09 IEEE Transactions on Electron Devices  
A 3.3 kV 1000 A High Power Density SiC Power Module with Sintered Copper Die Attach Technology K. Yasui 2019/05 PCIM Europe2019  
Analysis of degradation phenomena in bipolar degradation screening process for SiC-MOSFETs T. Ishigaki 2019/05 ISPSD2019  
1.2-kV SiC trench-etched double-diffused MOS (TED-MOS) for electric vehicle T. Suto 2018/09 ECSCRM  
Fabrication and characterization of 3.3-kV SiC DMOSFET with self-aligned channels formed by tilted ion implantation T. Morikawa 2018/09 ECSCRM  
Impact of Interface Trap Density of SiC-MOSFET in High-Temperature Environment S. Sato 2018/09 ECSCRM  
T. Ishigaki 2018/05 PCIM Europe2018  
Robustness improvement of short-circuit capability by SiC trench-etched double-diffused MOS (TED MOS) N. Tega 2018/05 ISPSD2018  
Improvement of Power Cycling Reliability of 3.3kV Full-SiC Power Modules with Sintered Copper Technology for Tj,max=175°C K. Yasui 2018/05 ISPSD2018  
Evaluation of Gate Oxide Reliability in 3.3 kV 4HSiC DMOSFET with J-Ramp TDDB Methods M. Sagawa 2018/05 ISPSD2018  
Analysis of Short-Circuit Break-Down Point in 3.3 kV SiC-MOSFETs K. Tani 2018/05 ISPSD2018  
Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults R.Fujita 2017/09 ICSCRM  
Channel Properties of SiC Trench-Etched Double-Diffused MOS (TED MOS) N.Tega 2016/02 IEEE Transactions on Electron Devices  
Novel Trench-etched Double-diffused SiC MOS (Ted MOS) to overcome tradeoff between RonA and Qgd N.Tega 2015/05 ISPSD  
Full-SiC 3.3kV/450A low inductance module; nHPD2 with smooth switching T.Ishigaki 2015/05 Mesago PCIM 2017  
*1
The first publication of the papers was at PCIM Europe Conference 2018.

SiC-SBD

Technical Paper Title First autor Submission Posting Comment
SiC-SBD 3.3KV hybrid module using SiC-SBD K.Ogawa 2012/03 IEEJ Written in Japanese
Traction inverter that applies hybrid module using 3-kV SiC-SBDs K.Ishikawa 2010/06 IPEC 2010 Paper: The 2010 International Power Electronics Conference - ECCE ASIA - (2010)

Sintered Copper

Technical Paper Title First autor Submission Posting Comment
Sintered Copper High Power Density Side-Gate HiGT Modules with Sintered Cu Having Superior High-Temperature Reliability to Sintered Ag T.Furukawa 2017/05 ISPSD  
Highly Reliable and Lead-Free High Power IGBT Modules Using Novel Copper Sintering Die attachment A.Konno 2016/05 PCIM  
New Bonding Technique Using Copper Oxide Materials T.Morita 2014/03 Materials Transactions  

Reliability

Technical Paper Title First autor Submission Posting Comment
Reliability Improvement of power cycling life in actual operating condition of power semiconductor module by Sn-based solder die bon
ding
Y. Harubeppu 2020/05 PCIM Europe2020  
Reliability and Failure Modes in Power cycling tests for solder bonding T. Miyazaki 2019/01 MATE2019 Written in Japanese
Reliability Evaluation of Sintered Metal Bonding A. Konno 2018/09 MES2018 Written in Japanese
Study on Vertical Crack Mechanism of Solder Y. Harubeppu 2018/09 JSME M&M Conference 2019 Written in Japanese
Improvement of Power Cycling Reliability of Sn-Cu Based Solder T.Miyazaki 2015/07 IMAPS
International Microelectronics Assembly and Packaging Society
 
Study of Heat Transfer Measurement Method of Water-cooled Heatsink K.Horiuchi 2015/06 HTSJ Lecture
High precision thermal resistance measurement technology for Direct Water Cooling Module K.Horiuchi 2015/05 JMA Lecture, Japanese
Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing K.Sasaki 2013/09 Microelectronics Reliability Contribution
Volume 53, Issue 9-11, 2013, pp1766-1770
Effect of Heat Generation on Fatigue-Crack Propagation of Solder in Power Devices S.Hiramitsu 2011/07 ASME InterPACK Lecture
IPACK2011-52247, pp. 345-350
Small size, low thermal resistance and high reliability packaging technologies of IGBT module for wind power applications K.Sasaki 2010/05 PCIM Lecture

Direct Water Cooling

Technical Paper Title First autor Submission Posting Comment
Direct Water Cooling Advanced Direct-water-cool Power Module having Pinfin Heatsink with Low Pressure Drop and High Heat Transfer K.Horiuchi 2013/05 ISPSD2013  

High Voltage IC

Technical Paper Title First autor Submission Posting Comment
High Voltage IC Low On-Resistance High Voltage Thin Layer SOI LDMOS Transistors with Stepped Field Plates K.Hara 2017/05 ISPSD2017  
A New Conpact, Low On Resistace and High Off Isolation High Voltage Analog Switch IC Without Using High Voltage Power Supplies for Ultrasound Imaging System F.Yamashita 2016/06 ISPSD2016  
600V Single Chip Inverter IC with New SOI Technology K.Hara 2014/06 ISPSD2014  

Alternator Diodes

Technical Paper Title First autor Submission Posting Comment
Alternator Diodes Super Low Loss Diode (SLLD) for Automotive Alternator Generators Y. Senzaki 2020/05 PCIM Europe2020