ISPSD 2017 (May 28 to June 1)

Paper publication: A Novel Hybrid Power Module with Dual Side-Gate HiGT and SiC-SBD

Hitachi, Ltd. R&D Group received The Ohmi Best Paper Award which is given to the best paper at the symposium with the paper. The paper shows a hybrid module consisted of dual gate IGBTs and SiC diodes which can make it possible to reduce switching loss by 50% compared to conventional modules with trench gate IGBTs and Si diodes.

ISPSD

International Symposium on Power Semiconductor Devices and ICs