Hitachi Power Semiconductor Device, Ltd.

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Hitachi

Hitachi Power Semiconductor Device, Ltd.

1700V

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1700V G-Version

  • High Power Density
  • Low Inductance
  • Scalable, Easy Paralleling
  • Standard and High Isolation Package
Package Type Name
(Update)		 IC(A) Feature Status*1 Application Note Outline Step file
2in1
IGBT		 1000
  • LV Package
    (Standard isolation)
 M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

1700V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
  • Low spike voltage
Package Type Name
(Update)		 IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT		 1600   M
2400   M
3600   M
2in1
IGBT		 600   M
1200   M
Chopper 1200   M
1200   M
1600   M
*1
M:Mass production, W:Working sample, U:Under development, N:Not for new design, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2011.

1700V D-Version

Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
2in1
Diode		 900   M  
1200   M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
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