Hitachi Power Semiconductor Device, Ltd.

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Hitachi Power Semiconductor Device, Ltd.

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3300V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2013.
*3
The first publication of the papers was at PCIM Europe Conference 2014.

3300V E3-Version

  • Fine Planer HiGT - sLiPT
  • Soft switching
  • Low spike voltage
  • For large Ls circuit, series connection
Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
1500   M  
2in1
IGBT
250
  • High isolation package
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

3300V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

3300V E-Version

  • Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
800   M  
1200   M  
*1
M:Mass production, W:Working sample, U:Under development, N:Not for new design, D:Discontinued

3300V D-Version

  • Planer IGBT - LiPT
  • Low switching loss
Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
Chopper 400   M  
2in1
Diode
800   M  
1200   M  
*1
M:Mass production, W:Working sample, U:Under development, N:Not for new design, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2012.
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