Hitachi Power Semiconductor Device, Ltd.

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Hitachi Power Semiconductor Device, Ltd.

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4500V F-H-Version

  • Advanced Trench HiGT - sLiPT
  • Low switching loss
  • High current rating
  • RoHS compliance
Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
1000
  • High isolation package
M  
1500
  • High isolation package
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

4500V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance
Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
1000
  • High isolation package
M
1500
  • High isolation package
M
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2015.

4500V E2-H-Version

  • Fine Planer HiGT - sLiPT
  • Low switching loss
Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
800
  • High isolation package
M  
1200
  • High isolation package
M  
2in1
IGBT
200
  • High isolation package
M  
2in1
Diode
800
  • High isolation package
M  
1200
  • High isolation package
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

4500V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
Package Type Name IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT
800
  • High isolation package
M  
1200
  • High isolation package
M  
2in1
Diode
400
  • High isolation package
M  
800
  • High isolation package
M  
1200
  • High isolation package
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
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