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Hitachi Power Semiconductor Device, Ltd.

Technical Literature

Technical Paper

IGBT

Technical Paper Title First autor Submission Posting Comment
IGBT High temperature, high power density power semiconductor module for xEV application K. Yasui 2020/08 Engineering Materials September 2020 Issue Written in Japanese
New 6.5kV 1000A IGBT Module with Side Gate HiGT H. Koguchi 2018/05 PCIM Europe2018  
An Innovative Silicon Power Device (i-Si)
through Time and Space Control of a Stored Carrier (TASC)
M. Mori 2018/05 ISPSD2018  
Dual Side-Gate HiGT Breaking Through the Limitation of IGBT Loss Reduction T.Miyoshi 2017/05 PCIM  
A Novel Hybrid Power Module with Dual Side-Gate HiGT and SiC-SBD Y.Takeuchi 2017/05 ISPSD  
Side Gate HiGT with Low Loss and Low Noise   2017/01 Hitachi Review 2017 Vol.99 No.1 Written in Japanese
Side Gate HiGT with Low dv/dt Noise and Low Loss M.Shiraishi 2016/06 ISPSD  
High Voltage Module with Low Internal Inductance for Next Chip Generation - Next High Power Density Dual (nHPD2) D.Kawase 2015/05 Mesago PCIM 2015  
New 4.5kV IGBT Module with Low Power Loss and High Current Ratings T.Matsumoto 2015/05 Mesago PCIM 2015  
New 1800A/3.3kV IGBT Module Using Advanced Trench HiGT Technoligy and Module Design Optimization T.Kushima 2014/05 Mesago PCIM 2014  
Novel 3.3-kV Advanced Trench HiGT with Low Loss and Low dv/dt Noise Y.Toyota 2013/05 ISPSD  
1.7kV Trench IGBT with Deep and Separate Floating p-Layer Designed for Low Loss, Low EMI Noise, and High Reliability S.Watanabe 2011/05 ISPSD  

SiC

Technical Paper Title First autor Submission Posting Comment
SiC A edge termination with enhanced field-limiting rings insensitive to surface charge for high voltage SiC power devices T. Hirao 2020/03 IEEE Transactions on Electron Devices  
Low loss technologies of Hitachi's Power Semiconductor Devices H. Kageyama 2019/01 Technical magazine Smart Grid January 2019 issue Written in Japanese
High reliability termination technology for SiC Power Devices H.Onose 2016/03 IEEJ Written in Japanese
Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depeletion-layer Capacitance (MDC) H.Matsushima 2015/09 SSDM  

SiC-MOS

Technical Paper Title First autor Submission Posting Comment
SiC-MOS High-power Density SiC Power Module (3.3 kV/1,000 A) Using Sintered-copper Die-attach Technology   2020/01 gHitachi Technology 2020: Technology & Innovation Foresights 2020h
2020 vol.120 No.1
Written in Japanese
SiC Modules for Railway Inverters Able to Operate at High Temperatures   2020/01 gHitachi Technology 2020: Technology & Innovation Foresights 2020h
2020 vol.120 No.1
Written in Japanese
Development of 3.3kV High Power Density Full-SiC Power Modules with Sintered Copper Die Attach Technology K. Yasui 2019/10 ISAPP2019  
Diode-less SiC Power Module With Countermeasures Against Bipolar Degradation Achieving Ultrahigh Power Density T. Ishigaki 2019/09 IEEE Transactions on Electron Devices  
A 3.3 kV 1000 A High Power Density SiC Power Module with Sintered Copper Die Attach Technology K. Yasui 2019/05 PCIM Europe2019  
Analysis of degradation phenomena in bipolar degradation screening process for SiC-MOSFETs T. Ishigaki 2019/05 ISPSD2019  
1.2-kV SiC trench-etched double-diffused MOS (TED-MOS) for electric vehicle T. Suto 2018/09 ECSCRM  
Fabrication and characterization of 3.3-kV SiC DMOSFET with self-aligned channels formed by tilted ion implantation T. Morikawa 2018/09 ECSCRM  
Impact of Interface Trap Density of SiC-MOSFET in High-Temperature Environment S. Sato 2018/09 ECSCRM  
T. Ishigaki 2018/05 PCIM Europe2018  
Robustness improvement of short-circuit capability by SiC trench-etched double-diffused MOS (TED MOS) N. Tega 2018/05 ISPSD2018  
Improvement of Power Cycling Reliability of 3.3kV Full-SiC Power Modules with Sintered Copper Technology for Tj,max=175C K. Yasui 2018/05 ISPSD2018  
Evaluation of Gate Oxide Reliability in 3.3 kV 4HSiC DMOSFET with J-Ramp TDDB Methods M. Sagawa 2018/05 ISPSD2018  
Analysis of Short-Circuit Break-Down Point in
3.3 kV SiC-MOSFETs
K. Tani 2018/05 ISPSD2018  
Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults R.Fujita 2017/09 ICSCRM  
Channel Properties of SiC Trench-Etched Double-Diffused MOS (TED MOS) N.Tega 2016/02 IEEE Transactions on Electron Devices  
Novel Trench-etched Double-diffused SiC MOS (Ted MOS) to overcome tradeoff between RonA and Qgd N.Tega 2015/05 ISPSD  
Full-SiC 3.3kV/450A low inductance module; nHPD2 with smooth switching T.Ishigaki 2015/05 Mesago PCIM 2017  
*1
The first publication of the papers was at PCIM Europe Conference 2018.

SiC-SBD

Technical Paper Title First autor Submission Posting Comment
SiC-SBD 3.3KV hybrid module using SiC-SBD K.Ogawa 2012/03 IEEJ Written in Japanese
Traction inverter that applies hybrid module using 3-kV SiC-SBDs K.Ishikawa 2010/06 IPEC 2010 Paper: The 2010 International Power Electronics Conference - ECCE ASIA - (2010)

Sintered Copper

Technical Paper Title First autor Submission Posting Comment
Sintered Copper High Power Density Side-Gate HiGT Modules with Sintered Cu Having Superior High-Temperature Reliability to Sintered Ag T.Furukawa 2017/05 ISPSD  
Highly Reliable and Lead-Free High Power IGBT Modules Using Novel Copper Sintering Die attachment A.Konno 2016/05 PCIM  
New Bonding Technique Using Copper Oxide Materials T.Morita 2014/03 Materials Transactions  

Reliability

Technical Paper Title First autor Submission Posting Comment
Reliability Improvement of power cycling life in actual operating condition of power semiconductor module by Sn-based solder die bon
ding
Y. Harubeppu 2020/05 PCIM Europe2020  
Reliability and Failure Modes in Power cycling tests for solder bonding T. Miyazaki 2019/01 MATE2019 Written in Japanese
Reliability Evaluation of Sintered Metal Bonding A. Konno 2018/09 MES2018 Written in Japanese
Study on Vertical Crack Mechanism of Solder Y. Harubeppu 2018/09 JSME M&M Conference 2019 Written in Japanese
Improvement of Power Cycling Reliability of Sn-Cu Based Solder T.Miyazaki 2015/07 IMAPS
International Microelectronics Assembly and Packaging Society
 
Study of Heat Transfer Measurement Method of Water-cooled Heatsink K.Horiuchi 2015/06 HTSJ Lecture
High precision thermal resistance measurement technology for Direct Water Cooling Module K.Horiuchi 2015/05 JMA Lecture, Japanese
Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing K.Sasaki 2013/09 Microelectronics Reliability Contribution
Volume 53, Issue 9-11, 2013, pp1766-1770
Effect of Heat Generation on Fatigue-Crack Propagation of Solder in Power Devices S.Hiramitsu 2011/07 ASME InterPACK Lecture
IPACK2011-52247, pp. 345-350
Small size, low thermal resistance and high reliability packaging technologies of IGBT module for wind power applications K.Sasaki 2010/05 PCIM Lecture

Direct Water Cooling

Technical Paper Title First autor Submission Posting Comment
Direct Water Cooling Advanced Direct-water-cool Power Module having Pinfin Heatsink with Low Pressure Drop and High Heat Transfer K.Horiuchi 2013/05 ISPSD2013  

High Voltage IC

Technical Paper Title First autor Submission Posting Comment
High Voltage IC Low On-Resistance High Voltage Thin Layer SOI LDMOS Transistors with Stepped Field Plates K.Hara 2017/05 ISPSD2017  
A New Conpact, Low On Resistace and High Off Isolation High Voltage Analog Switch IC Without Using High Voltage Power Supplies for Ultrasound Imaging System F.Yamashita 2016/06 ISPSD2016  
600V Single Chip Inverter IC with New SOI Technology K.Hara 2014/06 ISPSD2014  

Alternator Diodes

Technical Paper Title First autor Submission Posting Comment
Alternator Diodes Super Low Loss Diode (SLLD) for Automotive Alternator Generators Y. Senzaki 2020/05 PCIM Europe2020