株式会社日立パワーデバイス

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Hitachi

株式会社日立パワーデバイス

3300V

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3300V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance
Package Type Name
(Update)		 IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT		 1200   M
1800   M
1800
  • High isolation package
 M  
2in1
IGBT		 450
  • nHPD2
 M  
2in1
Diode		 1200
  • High isolation package
 M  
1in1
SiC		 1200   M  
1800   M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2013.
*3
The first publication of the papers was at PCIM Europe Conference 2014.

3300V E3-Version

  • Fine Planer HiGT - sLiPT
  • Soft switching
  • Low spike voltage
  • For large Ls circuit, series connection
Package Type Name
(Update)		 IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT		 1500   M  
2in1
IGBT		 250
  • High isolation package
 M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

3300V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
Package Type Name
(Update)		 IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT		 1000   M
1500   M
2in1
IGBT		 500   M
Chopper 1000   M
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

3300V E-Version

  • Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
Package Type Name
(Update)		 IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT		 800   M  
1200   M  
Chopper 800   N  
*1
M:Mass production, W:Working sample, U:Under development, N:Not for new design, D:Discontinued

3300V D-Version

  • Planer IGBT - LiPT
  • Low switching loss
Package Type Name
(Update)		 IC(A) Feature Status*1 Application Note Outline Step file
1in1
IGBT		 800   N  
800
  • Low recovery loss
  • For high frequency application
 N  
1200   N  
1200
  • High isolation package
 N  
2in1
IGBT		 400
  • Ultra low switching loss and recovery loss
  • For high frequency application
 N
Chopper 400   M  
800   N  
2in1
Diode		 800   M  
1200   M  
*1
M:Mass production, W:Working sample, U:Under development, N:Not for new design, D:Discontinued
*2
The first publication of the papers was at PCIM Europe Conference 2012.
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