ページの本文へ

Hitachi
お問い合わせお問い合わせ

本Webサイトをご利用頂く前にサイトの利用条件をご覧頂きますようお願いします。

SiC(Full SiC)

  • Ultra low switching loss with SiC MOSFET
  • High current density package
  • Low Inductance
  • Scalable, Easy Paralleling
Package Type Name
(Update)
VCES
(V)
IC(A) Feature Status*1 Application Note Outline Step file
2in1 SiC 1700 900
  • LV-nHPD2 Package
    (Standard isolation)
U  
3300 600
  • LV-nHPD2 Package
    (Standard isolation)
U  
3300 800
  • LV-nHPD2 Package
    (Standard isolation)
U  
2in1
SiC-SBD
3300 1200
  • IHM Package
    (Standard isolation)
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued

SiC(Hybrid SiC)

  • Advanced Trench HiGT - sLiPT
  • SiC Schottky Barrier Diode
  • Ultra low recovery loss with SiC diode
Package Type Name
(Update)
VCES
(V)
IC(A) Feature Status*1 Application Note Outline Step file
1in1
Hybrid-SiC
3300 1200
  • IHM Package
    (Standard isolation)
M  
3300 1800
  • IHM Package
    (Standard isolation)
M  
2in1
Hybrid-SiC
1700 1000
  • LV-nHPD2 Package
    (Standard isolation)
M  
*1
M:Mass production, W:Working sample, U:Under development, D:Discontinued
PDF形式のファイルをご覧になるには、Adobe Acrobat Readerが必要です。